SiO2Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference12 articles.
1. Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT
2. Stabilizing Control of DC/DC Buck Converters with Constant Power Loads in Continuous Conduction and Discontinuous Conduction Modes Using Digital Power Alignment Technique
3. A Novel type of High-Frequency Transformer Linked Soft-Switching PWM DC-DC Power Converter for Large Current Applications
4. AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
5. Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz
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2. Microstructure characterization and sidewall treatment of GaN/InGaN micro-light-emitting diodes;Nanophotonics and Micro/Nano Optics VII;2021-10-09
3. Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs;Crystals;2021-04-10
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5. Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation;Journal of Alloys and Compounds;2015-07
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