Effect of Dielectric Material Films on Crystallization Characteristics of Ge2Sb2Te5Phase-Change Memory Film
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Evidence for Ge2Sb2Te5 phase formation upon crystallization of Ge-doped Sb2Te3 phase change films;Vacuum;2024-09
2. Evidence for Ge2sb2te5 Phase Formation Upon Crystallization of Ge-Doped Sb2te3 Phase Change Films;2024
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4. Ultralow-fluence single-shot optical crystalline-to-amorphous phase transition in Ge–Sb–Te nanoparticles;Nanoscale;2018
5. Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices;Thin Solid Films;2015-09
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