Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

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Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2007-03-08 Issue:3A Volume:46 Page:1124-1128
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lo Wen-Cheng,Wu Shien-Yang,Chang Sun-Jay,Chiang Mu-Chi,Lin Chih-Yung,Chao Tien-Sheng,Chang Chun-Yen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs

2. Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET's

3. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

4. A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs;ECS Transactions;2009-05-15

2. Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides;2008 9th International Conference on Solid-State and Integrated-Circuit Technology;2008-10

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