Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference18 articles.
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1. Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor;Applied Physics Letters;2024-06-03
2. Double-gate polycrystalline-germanium thin-film transistors using copper-induced crystallization on flexible plastic substrate;Japanese Journal of Applied Physics;2019-03-19
3. Temperature dependent current transport behavior of improved low noise NiGe schottky diodes for low leakage Ge-MOSFET;Semiconductor Science and Technology;2019-02-22
4. Dopant behavior in heavily doped polycrystalline Ge1−xSnxlayers prepared with pulsed laser annealing in water;Japanese Journal of Applied Physics;2018-02-28
5. High n-type Sb dopant activation in Ge-rich poly-Ge1−xSnx layers on SiO2 using pulsed laser annealing in flowing water;Applied Physics Letters;2018-02-05
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