Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP-Reference-Cited by-同舟云学术

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Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP

Published:1980-01 Issue:1 Volume:19 Page:25-30
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nishizawa Jun-ichi,Koike Masayoshi,Miura Kaichi,Okuno Yasuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/19/i=1/a=25/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors;Semiconductors;2010-06

2. Deep defect levels in diode structures based on gallium phosphide;Journal of Applied Spectroscopy;2006-01

3. Diffusion of nonstoichiometric defects in n-GaP crystals;Materials Science in Semiconductor Processing;2003-10

4. Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers;Materials Science in Semiconductor Processing;2003-10

5. Increase of GaP green LED efficiency with pre-annealing of the substrate;Materials Science in Semiconductor Processing;2003-10

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