Ultrasonic Attenuation in n-Type Ge. III. Effects of Magnetic Field
Author:
Affiliation:
1. Department of Electrical Engineering, Waseda University
2. The Institute of Scientific and Industrial Research, Osaka University
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
https://journals.jps.jp/doi/pdf/10.1143/JPSJ.53.1356
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The stress dependence of acoustic properties of heavily doped n-type Ge;Journal of Physics: Condensed Matter;1991-06-24
2. The change in the sound velocity in Sb-doped Ge;Journal of Physics C: Solid State Physics;1988-08-10
3. The magnetic field dependence of the change in sound velocity in Sb-doped Ge;Journal of Physics C: Solid State Physics;1988-03-20
4. The change in sound velocity due to donor pairs in Ge;Journal of Physics C: Solid State Physics;1988-03-10
5. Acoustic properties of heavily doped many-valley semiconductors in the weak-localization regime;Physical Review B;1986-06-15
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