High Temperature Characteristics of Nearly 1.2 µm GaInAs/GaAs/AlGaAs Lasers-Reference-Cited by-同舟云学术

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High Temperature Characteristics of Nearly 1.2 µm GaInAs/GaAs/AlGaAs Lasers

Published:1999-10-15 Issue:Part 2, No. 10B Volume:38 Page:L1178-L1179
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Zhibiao,Schlenker Dietmar,Miyamoto Tomoyuki,Kondo Takashi,Kawaguchi Masao,Koyama Fumio,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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5. Properties of (InGa)As/GaAs QW (λ ≈ 1.2 µm) facet-coated edge emitting diode laser;Laser Physics;2006-03

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