Reduction of Surface Recombination in InGaAs/InP Heterostructures Using UV-Irradiation and Ozone-Reference-Cited by-同舟云学术

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Reduction of Surface Recombination in InGaAs/InP Heterostructures Using UV-Irradiation and Ozone

Published:1999-02-28 Issue:Part 1, No. 2B Volume:38 Page:1124-1127
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Driad Rachid,Lu Zheng-Hong,Laframboise Sylvain,Scansen Donald,Kinnon William,Alister Sean Patrick

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH;IEEE Journal of the Electron Devices Society;2020

2. Interfacial X‐ray photospectrometry study of In 0.53 Ga 0.47 As under different passivation treatments for metal oxide semiconductor field effect transistor devices;Micro & Nano Letters;2013-11

3. Properties of octadecanethiol self-assembled monolayers deposited on GaAs from liquid and vapor phases;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-11

4. Selective Liquid-Phase Oxidation of InGaAs and Application to Metal-Oxide-Semiconductor InAlAs∕InGaAs Metamorphic HEMT Without Gate Recess;Journal of The Electrochemical Society;2008

5. Near-Room-Temperature Selective Oxidation on InAlAs and Application to In[sub 0.52]Al[sub 0.48]As∕In[sub 0.53]Ga[sub 0.47]As Metamorphic HEMTs;Journal of The Electrochemical Society;2007

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