First Demonstration of Rectifying Property ofP-I-NHeterojunctions Fabricated by Tri-Layered Semiconducting Oxides-Reference-Cited by-同舟云学术

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First Demonstration of Rectifying Property ofP-I-NHeterojunctions Fabricated by Tri-Layered Semiconducting Oxides

Published:1999-04-30 Issue:Part 1, No. 4B Volume:38 Page:2675-2678
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugiura Masanori,Uragou Kazuyuki,Noda Makoto,Tachiki Minoru,Kobayashi Takeshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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