A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr0.7Bi2+yTa2O9Ferroelectric Films Prepared on SiO2/Si at Low Temperature by Pulsed Laser Deposition-Reference-Cited by-同舟云学术

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A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr0.7Bi2+yTa2O9Ferroelectric Films Prepared on SiO2/Si at Low Temperature by Pulsed Laser Deposition

Published:1999-04-30 Issue:Part 1, No. 4B Volume:38 Page:2275-2280
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Noda Minoru,Matsumuro Yoshinori,Sugiyama Hideki,Okuyama Masanori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Frequency and voltage dependent electrical properties of YMn0.90Os0.10O3 thin film on the SiO2/p-Si substrate;Materials Research Express;2020-02-05

3. Sintering and characterization of SrBi2Ta2O9 obtained by high-pressure processing at low temperatures;Journal of Solid State Chemistry;2016-01

4. Structural, Electrical, and Magnetic Properties of Mechanosynthesized (1−x)BiFeO3-xBaMnO3 (0 ≤ x ≤ 0.15) Multiferroic System;Journal of Electronic Materials;2015-05-29

5. Effect of the Sintering Temperature on Nanocrystalline Non-stoichiometric Sr0.8Bi2.2Ta2O9Ferroelectric Ceramics;Ferroelectrics;2014-01-03

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