Control of Surface Recombination of Si Wafers by an External Electrode-Reference-Cited by-同舟云学术

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Control of Surface Recombination of Si Wafers by an External Electrode

Published:1999-03-15 Issue:Part 2, No. 3B Volume:38 Page:L292-L294
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ichimura Masaya,Hirano Masashi,Kato Naoki,Arai Eisuke,Takamatsu Hiroyuki,Sumie Shingo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Deep-Level Defects on Surface Recombination Velocity at the Interface Between Silicon and Dielectric Films;IEEE Transactions on Electron Devices;2010-04

2. Field Passivation of the Silicon Wafer Rear Surface for Reliable Bulk Recombination Lifetime Measurement;Journal of The Electrochemical Society;2008

3. Bulk carrier lifetime measurement by the microwave reflectance photoconductivity decay method with external surface electric field;Applied Physics Letters;2002-06-10

4. Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field;Japanese Journal of Applied Physics;2001-05-15

5. Characterization of Si wafers by μ-PCD with surface electric field;Materials Science and Engineering: B;2000-04

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