Reduction of Inhomogeneous Broadening of Exciton Luminescence in CdxZn1-xSe Ternary Alloys and CdxZn1-xSe–ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply-Reference-Cited by-同舟云学术

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Reduction of Inhomogeneous Broadening of Exciton Luminescence in CdxZn1-xSe Ternary Alloys and CdxZn1-xSe–ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply

Published:1999-06-15 Issue:Part 1, No. 6A Volume:38 Page:3550-3555
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujimoto Masakatsu,Shigematsu Hiroshi,Senda Kazuhiko,Yoshikawa Mitsutoshi,Kubo Hachiya,Yamada Yoichi,Taguchi Tsunemasa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect in Changes of Conduction and Valence Band Offsets on Exciton Binding Energy in CdxZn1-xSe/ZnSySe1-ySingle Quantum Wells;Japanese Journal of Applied Physics;2007-01-10

2. Exciton-Phonon Scattering in CdSe/ZnSe Quantum Dots;Chinese Physics Letters;2002-03-26

3. Photoluminescence characterization of MBE-grown ZnTexSe1−x epitaxial layers with high Te concentrations;Journal of Crystal Growth;2000-06

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