Growth of ZnO on Sapphire (0001) by the Vapor Phase Epitaxy Using a Chloride Source-Reference-Cited by-同舟云学术

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Growth of ZnO on Sapphire (0001) by the Vapor Phase Epitaxy Using a Chloride Source

Published:1999-04-15 Issue:Part 2, No. 4B Volume:38 Page:L454-L456
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takahashi Naoyuki,Kaiya Kazuhiko,Nakamura Takato,Momose Yoshimi,Yamamoto Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Zinc Oxide Materials and Devices Grown by Molecular Beam Epitaxy;Molecular Beam Epitaxy;2018

2. High-quality ZnO thin film grown on sapphire by hydrothermal method;Materials Letters;2015-12

3. Oxygen Surplus to Zn in ZnO Films Deposited by Means of Direct Current Sputtering;J NANOELECTRON OPTOE;2015

4. Density functional theory (DFT) study of Zn, O2 and O adsorption on polar ZnO(0001) and ZnO (0001) surfaces;Journal of Crystal Growth;2013-07

5. Zinc oxide materials and devices grown by MBE;Molecular Beam Epitaxy;2013

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