35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate-Reference-Cited by-同舟云学术

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35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

Published:1999-06-15 Issue:Part 2, No. 6A/B Volume:38 Page:L629-L631
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saitoh Wataru,Yamagami Shigeharu,Itoh Atsushi,Asada Masahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the kinetics of platinum silicide formation;Applied Physics Letters;2011-02-21

2. Electrical characterization of epitaxial FeSi2 nanowire on Si (110) by conductive-atomic force microscopy;Journal of Materials Research;2010-02

3. Electrical and Magnetic Properties of FeSi 2 Nanowires;Chinese Physics Letters;2008-10-30

4. Method for Extracting Gate-Voltage-Dependent Source Injection Resistance of Modified Schottky Barrier (MSB) MOSFETs;IEEE Electron Device Letters;2008-09

5. Current transport mechanisms of Schottky barrier and modified Schottky barrier MOSFETs;ESSDERC 2007 - 37th European Solid State Device Research Conference;2007

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