A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode-Reference-Cited by-同舟云学术

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A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode

Published:1999-09-15 Issue:Part 2, No. 9A/B Volume:38 Page:L1015-L1017
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsuura Hideharu,Akatani Kenji,Ueda Michihisa,Segawa Kazushige,Tomozawa Hidemasa,Nishida Katsuhiko,Taniguchi Kazuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer;Sensors;2015-05-22

3. Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source;Japanese Journal of Applied Physics;2015-03-13

4. Simulation of Thick Gated Silicon Drift X-ray Detector Operated by a Single High-Voltage Source;Japanese Journal of Applied Physics;2013-02-01

5. Effect of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC on Reverse Current–Voltage Characteristics of Schottky Barrier Diodes;Japanese Journal of Applied Physics;2009-05-20

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