A Mesa-Diode Formation by Oxidized Porous Silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/15/i=11/a=2279/pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Luminescence and related properties of nanocrystalline porous silicon;Optical Properties. Part 3;2007
2. Fabrication and quantum properties of nanostructured silicon;Materials Science and Engineering: R: Reports;2003-03
3. The Formation of Porous Silicon and its Applications to Dielectric Isolation;MRS Proceedings;1984
4. Complete dielectric isolation by highly selective and self‐stopping formation of oxidized porous silicon;Applied Physics Letters;1983-02-15
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