Author:
Kasahara Jiro,Sakurai Hiroshi,Kato Yoji,Watanabe Naozo
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
16 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Chapter 1 Active Layer Formation by Ion Implantation;Semiconductors and Semimetals;1990
2. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
3. Zn gettering in InGaAs/InP interfaces;Journal of Applied Physics;1986-04
4. Annealing behavior of ion‐implanted Fe in InP;Journal of Applied Physics;1985-08-15
5. Annealing of zinc‐implanted GaAs;Journal of Applied Physics;1985-06-15