Improvement in Open-Circuit Memory, Current Efficiency and Response Speed of an Amorphous WO3Solid-State Electrochromic Device-Reference-Cited by-同舟云学术

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Improvement in Open-Circuit Memory, Current Efficiency and Response Speed of an Amorphous WO3Solid-State Electrochromic Device

Published:1982-11-20 Issue:Part 1, No. 11 Volume:21 Page:1642-1646
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Yoshiyuki,Fujiwara Ryoji,Shimizu Isamu,Inoue Eiichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. White ECD using zinc compound;SPIE Proceedings;1999-10-08

2. The Relation of the Adsorbed Water in Films to the Coloring Efficiency in Solid State Electrochromic Display;Electrochemistry;1999-02-05

3. The Behavior of Water in the WO₃ Electrochromic Device with Solid Electrolyte and the Changes of Morphology by Coloring-Bleaching Repetition;Electrochemistry;1999-01-05

4. Review of solid state electrochromic coatings produced using sol-gel techniques;Solar Energy Materials and Solar Cells;1993-10

5. Electrochromic Tungsten-Oxide–Based Thin Films: Physics, Chemistry, and Technology;Physics of Thin Films;1993

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