Photoluminescence in Glow Discharge Deposited Amorphous Si1-xCx: H Films-Reference-Cited by-同舟云学术

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Photoluminescence in Glow Discharge Deposited Amorphous Si1-xCx: H Films

Published:1982-10-20 Issue:Part 2, No. 10 Volume:21 Page:L613-L615
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Watanabe Ichiro,Hata Yukio,Morimoto Akiharu,Shimizu Tatsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Planar light-emitting microcavities based on hydrogenated amorphous silicon carbide;Semiconductors;2014-10

2. Optical Properties of Hydrogenated Amorphous Silicon Carbide Films;Defect and Diffusion Forum;2000-02

3. Relationship between hydrogenation and optical properties of dielectrica‐SiC:H films prepared by tetrakis(trimethylsilyl)silane in remote H2plasma;Journal of Applied Physics;1995-03

4. Bonding structure and optical bandgap of rf sputtered hydrogenated amorphous silicon carbide alloy films;Journal of Non-Crystalline Solids;1994-06

5. Optical properties of α-SiC:H thin films grown by rf sputtering;Physical Review B;1994-03-15

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