Thermally Dried Ink-Jet Process for 6,13-Bis(triisopropylsilylethynyl)-Pentacene for High Mobility and High Uniformity on a Large Area Substrate-Reference-Cited by-同舟云学术

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Thermally Dried Ink-Jet Process for 6,13-Bis(triisopropylsilylethynyl)-Pentacene for High Mobility and High Uniformity on a Large Area Substrate

Published:2012-05-01 Issue: Volume:51 Page:051601
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ryu Gi Seong,Lee Myung Won,Jeong Seung Hyeon,Song Chung Kun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solvent Exchange in Controlling Semiconductor Morphology;Electronic Materials Letters;2022-10-27

2. Review Article: Crystal alignment for high performance organic electronics devices;Journal of Vacuum Science & Technology A;2019-07

3. Influence of substrate temperature and overlap condition on the evaporation behavior of inkjet-printed semiconductor layers in organic thin film transistors;Thin Solid Films;2016-01

4. Patterning process of ink-jet printed 6,13-bis(triisopropylsilylethynyl) pentacene layer using bank structures for organic thin film transistors;Thin Solid Films;2015-08

5. Small device-to-device variation of 6,13-bis(triisopropylsilylethynyl)pentacene field-effect transistor arrays fabricated by a flow-coating method;Japanese Journal of Applied Physics;2014-01-29

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