Effect of Graded Al$_{x}$Ga$_{1-x}$N Layers on the Properties of GaN Grown on Patterned Si Substrates-Reference-Cited by-同舟云学术

Effect of Graded Al$_{x}$Ga$_{1-x}$N Layers on the Properties of GaN Grown on Patterned Si Substrates

Published:2012-02-03 Issue: Volume:51 Page:025505
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hsiao Yu-Lin,Lu Lung-Chi,Wu Chia-Hsun,Chang Edward Yi,Kuo Chien-I,Maa Jer-Shen,Lin Kung-Liang,Luong Tien-Tung,Huang Wei-Ching,Chang Chia-Hua,Dee Chang Fu,Majlis Burhanuddin Yeop

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

1. GaN Power Transistors on Si Substrates for Switching Applications

2. Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

3. Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

4. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

5. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers

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