Negative Resistance Characteristics and Oscillation Phenomena in Si Diodes-Reference-Cited by-同舟云学术

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Negative Resistance Characteristics and Oscillation Phenomena in Si Diodes

Published:1963-09 Issue:9 Volume:2 Page:535-541
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fukami Toyoji,Homma Kazuaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Autosolitons in the Form of Current Filaments and Electric Field Domains in Semiconductors and Devices;Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices;1995

2. Post-breakdown bulk oscillations in gold-doped silicon p+−i−n+ double-injection diodes;Solid-State Electronics;1980-03

3. Effect of magnetic field on current filament in gold‐doped silicon;Applied Physics Letters;1972-08-15

4. Filamentation of the Current in Diodes Made of Semiconductors with Deep Impurity Levels;Physics of p-n Junctions and Semiconductor Devices;1971

5. Chapter 4 Double Injection in Semiconductors;Injection Phenomena;1970

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