Multiplicity of the Metal-Insulator Transition in Uncompensated, Randomly Doped Semiconductors-Reference-Cited by-同舟云学术

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Multiplicity of the Metal-Insulator Transition in Uncompensated, Randomly Doped Semiconductors

Published:1998-10-15 Issue:10 Volume:67 Page:3346-3348
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Phillips James C.¹

Affiliation:

1. Bell Laboratories, Lucent Technologies, Murray Hill, N.J. 07974-0636

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.67.3346

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaling analysis of the low temperature conductivity in neutron-transmutation-doped70Ge:Ga;Annalen der Physik;1999-11

2. Scaling analysis of the low temperature conductivity in neutron‐transmutation‐doped ⁷⁰ Ge:Ga;Annalen der Physik;1999-11

3. Is there an ideal phase diagram for high-temperature superconductors?;Philosophical Magazine B;1999-03

4. Nature and scaling properties of the intermediate phase of the impurity band metal–insulator transition;Solid State Communications;1999-01

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