Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference34 articles.
1. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
4. Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors
5. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
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2. Material Gain Engineering in Staggered Polar AlGaN/AlN Quantum Wells Dedicated for Deep UV Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2019-11
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4. Theoretical study of O- and Zn-face polarity effect on the optical properties of the conventional and staggered ZnO/Zn1−xCdxO/ZnO quantum wells;Thin Solid Films;2015-11
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