Annealing Behaviour of Stress in Sb-Implanted Si
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/17/i=6/a=1003/pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Penetration Depth of Diffusion-Induced Dislocations;Japanese Journal of Applied Physics;1983-07-20
2. A simultaneous study of lattice expansion and swelling in proton-bombarded gap single crystals;Radiation Effects;1983-01
3. High-dose argon implantation in silicon studied by X-ray topography;Philosophical Magazine A;1980-03
4. Investigation of radiation damage in ion implanted silicon crystals by pendellösung topography;Physica Status Solidi (a);1979-02-16
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