A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device-Reference-Cited by-同舟云学术

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A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device

Published:2000-07-15 Issue:Part 1, No. 7A Volume:39 Page:3924-3929
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Hae-Jeong,Goo Juseon,Kim Seong-Ho,Hong Jin-Gi,Lee Hyeon-Deok,Kang Ho-Kyu,Lee Sang-In,Lee Moon Yong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid photonic integrated circuits for neuromorphic computing [Invited];Optical Materials Express;2023-11-28

2. Deposition of organic–inorganic hybrid polymer thin films with a silsesquioxane unit;Japanese Journal of Applied Physics;2022-04-01

3. Precise electron beam-based target-wavelength trimming for frequency conversion in integrated photonic resonators;Optics Express;2022-02-16

4. Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03

5. Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System;Korean Journal of Materials Research;2016-09-30

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