Stoichiometry Study of S-Terminated GaAs(001)-(2 ×6) Surface with Synchrotron Radiation Photoelectron Spectroscopy-Reference-Cited by-同舟云学术

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Stoichiometry Study of S-Terminated GaAs(001)-(2 ×6) Surface with Synchrotron Radiation Photoelectron Spectroscopy

Published:2000-07-15 Issue:Part 1, No. 7A Volume:39 Page:3943-3946
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimoda Masahiko,Tsukamoto Shiro,Ohno Takahisa,Koguchi Nobuyuki,Sugiyama Munehiro,Maeyama Satoshi,Watanabe Yoshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics;Materials Research Express;2023-04-01

2. Theoretical analysis of semiconductor surface passivation by adsorption of alkaline-earth metals and chalcogens;Applied Surface Science;2012-08

3. Novel Palladium Catalyst Supported on GaAs(001) Passivated by Ammonium Sulfide;Chemistry Letters;2004-09

4. Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface;Japanese Journal of Applied Physics;2002-11-01

5. Surface modification of III–V semiconductors: chemical processes and electronic properties;Progress in Surface Science;2002-07

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