High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors-Reference-Cited by-同舟云学术

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High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors

Published:2000-04-30 Issue:Part 1, No. 4B Volume:39 Page:2008-2011
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yano Hiroshi,Hirao Taichi,Kimoto Tsunenobu,Matsunami Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs;Solid State Phenomena;2023-05-25

2. Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices;IEEE Transactions on Electron Devices;2020-10

3. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review;Materials Science in Semiconductor Processing;2018-05

4. Interfacial atomic site characterization by photoelectron diffraction for 4H-AlN/4H-SiC($11\bar{2}0$) heterojunction;Japanese Journal of Applied Physics;2016-07-06

5. Slow response in gate current–voltage characteristics of metal–oxide–semiconductor structures on the 4H-SiC$(000\bar{1})$ face;Japanese Journal of Applied Physics;2016-04-20

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