Molybdenum Film Technology For Power Metal Oxide Semiconductor Field Effect Transistor Gate Electrode Applications-Reference-Cited by-同舟云学术

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Molybdenum Film Technology For Power Metal Oxide Semiconductor Field Effect Transistor Gate Electrode Applications

Published:2000-07-15 Issue:Part 1, No. 7A Volume:39 Page:3915-3918
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Ying-Kun,Liang Chun-Guang,Wang Zhan-Li,He Yu-Zhang,Lang Xiu-Lan,Zhou Ming-Hui

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New low temperature environmental friendly process for the synthesis of tetragonal MoO2 and its field emission properties;Applied Surface Science;2019-02

2. Novel cold cathode materials and applications;Materials Science and Engineering: R: Reports;2005-01

3. Large-Area Nanowire Arrays of Molybdenum and Molybdenum Oxides: Synthesis and Field Emission Properties;Advanced Materials;2003-11-04

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