Metal-Oxide-Semiconductor Characteristics of NH3-Nitrided N2O-Annealed Oxides Fabricated at Reduced Pressure
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Published:2000-04-30
Issue:Part 1, No. 4B
Volume:39
Page:2045-2049
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Yoon Giwan,Epstein Yefim
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering