Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
-
Published:2000-04-30
Issue:Part 1, No. 4B
Volume:39
Page:2435-2438
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:en
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Kodama Satoshi,Furuta Tomofumi,Watanabe Noriyuki,Ito Hiroshi,Kanda Atsushi,Muraguchi Masahiro,Ishibashi Tadao
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering