Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
-
Published:2000-11-15
Issue:Part 2, No. 11B
Volume:39
Page:L1149-L1151
-
ISSN:0021-4922
-
Container-title:Japanese Journal of Applied Physics
-
language:
-
Short-container-title:Jpn. J. Appl. Phys.
Author:
Chien Pei Wei,Wu San Lein,Chang Shoou Jinn,Wang Yan Ping,Miura Hidetoshi,Shiraki Yasuhiro
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering