AlGaAs/InGaAs Pseudomorphic Doped Channel Field Effect Transistor with A P-AlAs Buffer Layer Grown by Metalorganic Chemical Vapor Deposition
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Published:2000-05-15
Issue:Part 1, No. 5A
Volume:39
Page:2508-2511
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Choi Seung June,Chung Youn Kyu,Kim Dae Hyun,Chu Hyung Joon,Seo Kwang Seok
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering