Thickness Dependence of the Time Dependent Dielectric Breakdown Characteristics of Pb(Zr, Ti)O3Thin Film Capacitors for Memory Device Applications-Reference-Cited by-同舟云学术

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Thickness Dependence of the Time Dependent Dielectric Breakdown Characteristics of Pb(Zr, Ti)O3Thin Film Capacitors for Memory Device Applications

Published:2000-06-15 Issue:Part 1, No. 6A Volume:39 Page:3488-3491
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kundu T. K.,Lee Joseph Ya-min

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics;Japanese Journal of Applied Physics;2018-03-05

2. Reliability of PZT Capacitors;Ferroelectric Dielectrics Integrated on Silicon;2013-02-27

3. The characterization of retention properties of metal–ferroelectric (PbZr0.53Ti0.47O3)–insulator (Dy2O3, Y2O3)–semiconductor devices;Microelectronics Reliability;2007-04

4. A phenomenological cohesive model of ferroelectric fatigue;Acta Materialia;2006-02

5. Simulation of thickness dependence in ferroelectric thin films;Solid State Communications;2004-10

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