Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Originated-Pits-free Wafer as a Function of Oxide Thickness-Reference-Cited by-同舟云学术

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Gate-Oxide-Integrity Characteristics of Vacancy-rich Wafer Compared with Crystal-Originated-Pits-free Wafer as a Function of Oxide Thickness

Published:2000-07-15 Issue:Part 1, No. 7A Volume:39 Page:4053-4058
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Ki-Sang,Cho Won-Ju,Lee Bo-Young,Yoo Hak-Do

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Surface Roughness and Copper Contamination on the Oxide Breakdown of Silicon Wafer;Japanese Journal of Applied Physics;2002-06-15

2. Silicon;Encyclopedia of Materials: Science and Technology;2001

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