Photocapacitance Measurement on Intentionally Undoped n-TypeGa0.9Al0.1AsGrown by Stoichiometry Control Method-Reference-Cited by-同舟云学术

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Photocapacitance Measurement on Intentionally Undoped n-TypeGa0.9Al0.1AsGrown by Stoichiometry Control Method

Published:1994-04-15 Issue:Part 1, No. 4A Volume:33 Page:1753-1758
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nishizawa Jun-ichi,Motozawa Mitsutake,Oyama Yutaka,Dezaki Kazushi,Fujishiro Hiroyuki,Suto Ken

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Stoichiometry and Te Concentration on the Deep Levels in Liquid‐Phase Epitaxially Grown n‐Type Al0.3Ga0.7As;Journal of The Electrochemical Society;1998-08-01

2. Effect of stoichiometry on the dominant deep levels in liquid phase epitaxially grown n-type Al0.3Ga0.7As doped with Te;Journal of Applied Physics;1996

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