Low Dark Current and High-Speed Metal-Semiconductor-Metal Photodetector on Sulfur-Treated InP-Reference-Cited by-同舟云学术

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Low Dark Current and High-Speed Metal-Semiconductor-Metal Photodetector on Sulfur-Treated InP

Published:1994-12-15 Issue:Part 1, No. 12A Volume:33 Page:6454-6457
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Han Il Ki,Her June,Byun Young Tae,Lee Seok,Woo Deok Ha,Lee Jung Il,Kim Sun Ho,Kang Kwang Nam,Park Hong Lee

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On laterally spreading of space–charge-region in planar metal-semiconductor-metal structures;Solid-State Electronics;2003-10

2. Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region;Solid-State Electronics;2003-08

3. In situ measurements of GaN photoluminescence at metal and electrolyte contacts;Applied Physics Letters;2002-10-21

4. Intrinsic and extrinsic photoresponse of Mo/n-Si/Mo structures with wide electrode gap;Solid-State Electronics;2002-09

5. Oscillatory Behavior during the Anodization of InP;Electrochemical and Solid-State Letters;2002

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