The Influence of Oxidation Temperature and Gate Metal on the Electrical Properties of InP Metal-Insulator-Semiconductor Tunnel Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Space-Charge-Limited Currents in La2O3Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing;Japanese Journal of Applied Physics;2005-06-10
2. On the determination of interface state density in n-InP Schottky structures by current–voltage measurements;Solid-State Electronics;2000-03
3. Stability of sulfur-treated n-InP Schottky structures, studied by current–voltage measurements;Materials Science and Engineering: B;1998-04
4. Gate resistance determination for HEMTs with MIS-type Schottky contact;Solid-State Electronics;1996-02
5. Comparison of the electrical characteristics of Si metal–insulator–semiconductor tunnel diodes with interfacial layer grown by rapid thermal oxidation of Si in O2 and in N2O;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-03
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