Sub 20 nm Stitching and Overlay for Nano Lithography Applications-Reference-Cited by-同舟云学术

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Sub 20 nm Stitching and Overlay for Nano Lithography Applications

Published:1994-12-30 Issue:Part 1, No. 12B Volume:33 Page:6971-6975
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Koek Bartholomeus H.,Chisholm Thomas,Romijn Johannes,Run Arnoldus J. van

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of field stitching in electron-beam lithography using moiré metrology;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

2. Scintillating global-fiducial grid for electron-beam lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11

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