Ion-Assisted Crystal Growth by Post Irradiation as Applied to Nitride Formation-Reference-Cited by-同舟云学术

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Ion-Assisted Crystal Growth by Post Irradiation as Applied to Nitride Formation

Published:1994-06-15 Issue:Part 1, No. 6A Volume:33 Page:3566-3570
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Min Kyung-youl,Tarutani Masayoshi,Inoue Masahiko,Shimizu Ryuichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Deposited and Nitrogen-implanted Titanium Films;e-Journal of Surface Science and Nanotechnology;2005

2. Auger electron spectroscopy and ion scattering spectroscopy studies of altered layer formation in AlN thin film prepared by post-irradiation with N2+ ions;Surface and Interface Analysis;2002

3. Transformation of (0002)-oriented Ti film into (111)TiN through nitrogen implantation;Applied Physics A: Materials Science & Processing;2000-01-01

4. Early nitriding stage of evaporated-Ti thin films by N-ion implantation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-07

5. Titanium Nitride Thin Films Epitaxially Grown by N-Implantation;Japanese Journal of Applied Physics;1997-04-15

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