Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
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Published:1994-06-15
Issue:Part 2, No. 6B
Volume:33
Page:L830-L831
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Washima Mineo,Mishima Tomoyoshi,Kudo Makoto
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering