Anisotropy in Etching and Deposition of Selective Epitaxial Growth of GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Local Epitaxy under Conditions of Strong Growth Rate Anisotropy;Growth of Crystals;1986
2. Aspects of GaAs Selective Area Growth by Molecular Beam Epitaxy with Patterning by SiO2 Masking;Journal of The Electrochemical Society;1983-10-01
3. Selective Epitaxial Growth of GaAs by Liquid Phase Electroepitaxy;Journal of The Electrochemical Society;1982-01-01
4. Lateral growth of single-crystal InP over dielectric films by orientation-dependent VPE;Journal of Crystal Growth;1982-01
5. Selective Epitaxial Growth of GaAs from the Liquid Phase;Japanese Journal of Applied Physics;1977-12
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