CaF2/Fe3Si/CaF2Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=6/a=063006/pdf
Reference24 articles.
1. New Class of Materials: Half-Metallic Ferromagnets
2. Tunneling magnetoresistance of a GaMnAs-based double barrier ferromagnetic tunnel junction
3. Resonant Enhancement of Tunneling Magnetoresistance in Double-Barrier Magnetic Heterostructures
4. Electrical Detection of Spin Accumulation in ap-Type GaAs Quantum Well
5. Tunneling magnetoresistance in GaMnAs∕AlAs∕InGaAs∕AlAs∕GaMnAs double-barrier magnetic tunnel junctions
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5. Dependence of Resonant Voltage on Quantum-Well Width in CaF$_{2}$/Fe$_{3}$Si/CaF$_{2}$ Resonant Tunneling Diodes;Japanese Journal of Applied Physics;2011-10-20
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