Improvement of Hydrogen-Terminated Diamond Field Effect Transistors in Nitrogen Dioxide Atmosphere
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=8/a=086502/pdf
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1. Resistivity of chemical vapor deposited diamond films
2. Scanning-tunneling-microscope observation of the homoepitaxial diamond (001) 2×1 reconstruction observed under atmospheric pressure
3. Hall Effect Measurements of Surface Conductive Layer on Undoped Diamond Films in NO2and NH3Atmospheres
4. Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance
5. Formation Mechanism of p-Type Surface Conductive Layer on Deposited Diamond Films
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