Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal–Oxide–Semiconductor Structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=2/a=021201/pdf
Reference19 articles.
1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
2. Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor
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4. Intrinsic SiC/SiO2 Interface States
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1. Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms;Chinese Physics B;2023-04-01
2. Characterization methods for defects and devices in silicon carbide;Journal of Applied Physics;2022-04-14
3. Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices;Semiconductor Science and Technology;2021-03-17
4. Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method;IEEE Access;2021
5. Effect of pulsed UV laser irradiation on 4H-SiC MOS with thermal gate oxide;Journal of Materials Science: Materials in Electronics;2020-01-01
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