VPE-Grown 1.3 µm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers-Reference-Cited by-同舟云学术

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VPE-Grown 1.3 µm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers

Published:1983-07-20 Issue:Part 2, No. 7 Volume:22 Page:L415-L416
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yanase Tomoo,Kato Yoshitake,Mito Ikuo,Kobayashi Kenichi,Nishimoto Hiroyuki,Usui Akira,Kobayashi Kohroh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 6.5.1 Growth of GaInAs quantum wells on InP substrates;Growth and Structuring;2013

2. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991

3. Modified double‐channel planar‐buried heterostructure laser with improved high‐temperature stability;Journal of Applied Physics;1987-07

4. Epitaxial growth of InP and related alloys;Progress in Crystal Growth and Characterization;1986-01

5. High reliability of 1.5 μm two-step VPE-LPE-grown DC-PBH lasers;Electronics Letters;1985

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