Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition-Reference-Cited by-同舟云学术

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Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition

Published:1983-07-20 Issue:Part 2, No. 7 Volume:22 Page:L473-L475
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kishino Katsumi,Kinoshita Susumu,Konno Satoshi,Tako Toshiharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant;Thin Solid Films;2005-03

2. On the morphology of films grown by droplet-assisted molecular beam epitaxy;Brazilian Journal of Physics;2002-06

3. Surface-Emitting Lasers;Semiconductor Lasers II;1999

4. Melt-back etching of GaN;Solid-State Electronics;1997-02

5. Mode-Control Techniques in Semiconductor Lasers;Process Technology for Semiconductor Lasers;1996

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