Fabrication of Low Temperature Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory Devices for Digital Memory on Glass Applications-Reference-Cited by-同舟云学术

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Fabrication of Low Temperature Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory Devices for Digital Memory on Glass Applications

Published:2008-04-25 Issue:4 Volume:47 Page:2728-2732
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Koo Hyun-Mo,Cho Won-Ju,Lee Dong Uk,Kim Seon Pil,Kim Eun Kyu,Jung Jongwan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference17 articles.

1. 18.5L: Late-News Paper: low power Consumption TFT-LCD with Dynamic Memory Embedded in Pixels

2. 18.2: A 2.15 inch QCIF Reflective Color TFT-LCD with Digital memory on Glass (DMOG)

3. 21.3: Invited Paper: Latest Development of “System-on-Glass” Display with Low Temperature Poly-Si TFT

4. Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO1.3N insulators by digital sputtering method

5. Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge-Trap-Non-volatile Memory and Focus on Flexible Flash Memory Devices;Charge-Trapping Non-Volatile Memories;2017

2. Speed Enhancement of WSi$_{2}$ Nanocrystal Memory with Barrier-Engineered Si$_{3}$N$_{4}$/HfAlO Tunnel Layer;Japanese Journal of Applied Physics;2012-06-20

3. Speed Enhancement of WSi2Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer;Japanese Journal of Applied Physics;2012-06-01

4. Characterization of dual floating gate memory devices constructed on glass;Solid State Communications;2011-01

5. Memory characteristics of poly-Si using MIC as an active layer on glass substrates;Journal of Physics D: Applied Physics;2010-02-25

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