Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference34 articles.
1. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates
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5. Modeling of stress effects in silicon oxidation
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2. First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide;Japanese Journal of Applied Physics;2019-10-24
3. Reconsideration of Si pillar thermal oxidation mechanism;Japanese Journal of Applied Physics;2018-04-13
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