Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device-Reference-Cited by-同舟云学术

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Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device

Published:2008-10-17 Issue:10 Volume:47 Page:7775-7779
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Ji-Young,Kim Cho-Rong,Lee Jaeyeop,Park Won-Wook,Leem Jae-Young,Ryu Hyukhyun,Lee Won-Jae,Zhang Ying-Ying,Jung Soon-Yen,Lee Hi-Deok,Kim In-Kyum,Kang Suk-June,Yuk Hyung-Sang,Lee Keunwoo,Jeon Sunyeol,Jeon Hyeongtag

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. SOI (Silicon-On-Insulator) for High Speed Ultra Large Scale Integration

2. Optimization of series resistance in sub-0.2 /spl mu/m SOI MOSFET's

3. Fully-depleted SOI CMOSFETs with the fully-silicided source/drain structure

4. Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET

5. Formation of Nickel Silicide Layer on Strained-Si0.83Ge0.17/Si(001) using a Sacrificial Si Layer and its Morphological Instability

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trench based structure to modulate the stress induced by silicide metallized electrodes in semiconductor device;Journal of Physics: Conference Series;2020-07-01

2. Preparation of NiSi2Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires;Applied Physics Express;2009-06-26

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